1 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w101 5 - 30 00 mhz mmic amplifier parameters units typical frequency mhz 900 2000 gain db 18 11 s11 db - 10 - 10 s22 db - 18 - 18 output ip3 1) dbm 30 31 noise figure db 3.8 4.0 output p1db dbm 17 18 current ma 40 40 device voltage v 3.3 3.3 1) oip3 is mea sured with two tones at an output power of +3 dbm/tone separated by 1 mhz. parameters units min typ max testing frequency mhz 900 gain db 17 18 s11 db - 10 s22 db - 18 output ip3 dbm 29 30 noise figure db 3.8 4.5 output p1db dbm 16 17 cu rrent ma 35 40 45 device voltage v 3.3 parameters rating operating case temperature - 40 to + 85 c storage temperature - 40 to + 150 c device voltage +6 v operating junction temper a ture + 150 c input rf power ( cw, 50ohm matched)* 25 dbm * please find the max. input power data from http://www.asb.co.kr/pdf/maximum_input_power_analysis.pdf feature s description absolute maximum ratings 18 db gain at 900 mhz 17 dbm p1db at 900 mhz 30 dbm output ip3 at 900 mhz 3.8 db nf at 900 mhz mttf > 100 years single supply the ASW101, a power amplifier mmic, has a high linearity , high gain, and high efficiency over a wide range of frequency, being suitable for use in both r e- ceiver and transmitter of telecommunication systems up to 3 ghz. the amplifier is available in a n sot - 89 package and passes through the stringent dc, rf, and reliability tests. application circuit if if (low current) 500 ~ 2500 mhz product specifications typical perfor m ance ASW101 package style: sot - 89 pin configuration pin no. function 1 rf in 2 gnd 3 rf out / bias
2 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w101 5 - 30 00 mhz mmic amplifier pin no. function 1 rf in 2 gnd 3 rf out / bias mounting recommendation (in mm) outline drawing note : 1. the number and size of ground via holes in a circuit board is critical for thermal and rf grounding consi d erations. 2. we recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better rf and thermal performance, as shown in the drawing at the left side. symbols dimensions (in mm) min nom max a 1.40 1.50 1.60 l 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0.38 0.4 0 0.43 d 4.40 4.50 4.60 d1 1.40 1.60 1.75 e 3.64 --- 4.25 e1 2.40 2.50 2.60 e1 2.90 3.00 3.10 h 0.35 0.40 0.45 s 0.65 0.75 0.85 e 1.40 1.50 1.60 as w101 pxxxx lot no. part no. part number description ordering information
3 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w101 5 - 30 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +3 dbm/tone s e- parated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit if 5 ~ 450 mhz +3.3 v 0 100 200 300 400 500 0 5 10 15 20 25 30 gain (db) frequency (mhz) 0 100 200 300 400 500 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 100 200 300 400 500 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) rf in rf out ASW101 c3=100 pf c4=1 m f d1=5.6v zener diode vcc=3.3 v r1=2.4 k w c1=1 m f c2=1 m f l1=1 mh frequency (mhz) 5 150 300 450 magnitude s21 (db) 25 24.5 23.5 21.5 magnitude s11 (db) - 15 - 15 - 14 - 12 magnitude s22 (db) - 12 - 15 - 14 - 12 outpu t p1db (dbm) 17 17 17 17 output ip3 1) (dbm) 28 29 30 30 noise figure (db) 3.6 3.8 4.0 3.8 device voltage (v) 3.3 current (ma) 40
4 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w101 5 - 30 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of - 5 dbm/tone separat ed by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters (r bias=3.9 kohm) & k - factor application circuit r bias 3.9 kohm 3.6 kohm frequency (mhz) 60~110 60~110 magnitude s21 (db) 20 20.5 gain flatness (db) 0.4 0.4 magnitude s11 (db) - 9.5 - 10 magnitude s22 (db) - 9 - 11 output p1db (dbm) 4.5 4.5 output ip3 1) (dbm) 12 12 noise figure (db) 2.4 2.4 device voltage (v) 3 3 current (ma) 8 10 if low current 60 ~ 110 mhz +3 v 0 50 100 150 200 250 300 0 5 10 15 20 25 gain (db) frequency (mhz) 0 50 100 150 200 250 300 -20 -15 -10 -5 0 5 s11 (db) frequency (mhz) 0 50 100 150 200 250 300 -20 -15 -10 -5 0 5 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) c1=1000 pf l1=390 nh rf in rf out ASW101 c3=1000 pf c4=1 m f d1=5.6v zener diode vcc=3 v r bias= 3.9 k w c2=1000 pf or 3.6 k w r1=620 w
5 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w101 5 - 30 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +3 dbm/tone separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit 500 ~ 2500 mhz +3.3 v frequency (mhz) 500 900 1750 2000 2400 magnitude s21 (db) 21 18 12.5 11 9.5 magnitude s11 (db) - 10 - 10 - 11 - 10 - 8.5 magnitude s22 (db) - 22 - 18 - 18 - 18 - 15 output p1db (dbm) 17 17 18 18 18 output ip3 1) (dbm) 30 30 31 31 31 noise figure (db) 4.2 3.8 3.9 4.0 4.5 device voltage (v) 3.3 current (ma) 40 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) c1=100 pf l1=56 nh rf in rf out ASW101 c3=100 pf c4=1 m f d1=5.6v zener diode vcc=3.3 v r1=2.4 k w c2=100 pf 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 gain (db) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 3500 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 3500 -20 -15 -10 -5 0 5 s11 (db) frequency (mhz) -40 o c 25 o c 85 o c
6 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 20 10 as w101 5 - 30 00 mhz mmic amplifier p1db vs. frequency current vs . temperature output ip3 vs. tone power (frequency = 2000mhz) output ip3 vs. frequency gain vs. temperature -60 -40 -20 0 20 40 60 80 100 10 20 30 40 50 60 current (ma) temperature ( o c) 0 500 1000 1500 2000 2500 3000 12 14 16 18 20 22 p1db (dbm) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 24 26 28 30 32 34 output ip3 (dbm) frequency (mhz) -40 o c 25 o c 85 o c -60 -40 -20 0 20 40 60 80 100 12 14 16 18 20 22 gain (db) temperature ( o c) frequency = 900 mhz -2 0 2 4 6 8 10 12 14 10 15 20 25 30 35 40 output ip3 (dbm) p out per tone (dbm) -40 o c 25 o c 85 o c nf vs. temperature (frequency = 850mhz) -60 -40 -20 0 20 40 60 80 100 0 1 2 3 4 5 6 nf (db) temperature ( o c) frequency = 850 mhz
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